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AK5362048BW - 2097152 Word by 32 Bit CMOS Dynamic Random Access Memory

Description

The Accutek AK5362048BW high density memory module is a CMOS dynamic RAM organized in 2048K x 36 bit words.

The module consists of four standard 1 Meg x 16 bits DRAMs and two 1 Meg x 4 bit Quad CAS DRAM in plastic SOJ packages.

Features

  • 2,097,152 x 36 bit organization.
  • 72 pad Single In-Line Module.
  • CAS-before-RAS, RAS-only or hidden refresh.
  • Operating free air temperature 0oC to 70oC.
  • Single 5 Volt Power Supply.
  • 1024 Refresh Cycles, 16 mSEC.
  • Available in Fast Page Mode and EDO.
  • Power 2.125 Watt Max Active (50nS) 1.975 Watt Max Active (60 nS) 1.825 Watt Max Active (70 nS) 30 mW Max Standby.
  • Downward compatible with AK5361024W, AK536512W and AK536256W.
  • Upward compatible with AK5.

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Datasheet preview – AK5362048BW

Datasheet Details

Part number AK5362048BW
Manufacturer ACCUTEK
File Size 156.53 KB
Description 2097152 Word by 32 Bit CMOS Dynamic Random Access Memory
Datasheet download datasheet AK5362048BW Datasheet
Additional preview pages of the AK5362048BW datasheet.

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Other Datasheets by ACCUTEK
  • AK536256W - 262144 Word by 32 Bit CMOS Dynamic Random Access Memory
  • AK5361024BW - 1048576 Word by 32 Bit CMOS Dynamic Random Access Memory
  • AK5361024W - 1048576 Word by 32 Bit CMOS Dynamic Random Access Memory
  • AK5364096W - 4194304 Word by 32 Bit CMOS Dynamic Random Access Memory
  • AK536512W - 524288 Word by 32 Bit CMOS Dynamic Random Access Memory
  • AK5368192W - 8388608 by 32 Bit CMOS Dynamic Random Access Memory
  • AK5321024N - 1048576 Word by 32 Bit CMOS Dynamic Random Access Memory
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Full PDF Text Transcription

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MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK5362048BW high density memory module is a CMOS dynamic RAM organized in 2048K x 36 bit words. The module consists of four standard 1 Meg x 16 bits DRAMs and two 1 Meg x 4 bit Quad CAS DRAM in plastic SOJ packages. The assembly has 3 DRAMs mounted on each side of a printed circuit board in a 72 pad leadless SIM configuration. This configuration allows socket-mounting of large quantities of memory in applications where high density and ease of inserting additional memory are important. The operation of the AK5362048BW is identical to sixteen 1 Meg x 4 plus eight 1 Meg x 1 DRAMs. There are four CAS lines and two RAS lines. On each bank of 1 Meg x 36, independent byte control is accomplished by four CAS lines.
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