ACE Technology ACE1420M
The ACE1420M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.| Part No. | ACE1420M |
|---|---|
| Datasheet | ACE1420M Download |
| Manufacturer |  ACE Technology |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Low rDS(on) trench technology● Low thermal impedance
● Fast switching speed
APPLICATIONS
● Power Routing● Li Ion Battery Packs
● Level Shifting and Driver Circuits
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Limit Units VDS 20 V VGS ±8 V 15 ID A 11.9 IDM 60 A IS 2.9 A 3 PD W 1.9 TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA Maximum 40 90 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 Packaging Type DFN2*2-6L ACE1420M N-Channel 20-V MOSFET Ordering information ACE1420M MN + H Halogen - free Pb - free MN : DFN2*2-6L VER 1.1 2 ACE1420M N-Channel 20-V MOSFETELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise specified.
