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ACE2010M - P-Channel MOSFET

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Datasheet Details

Part number ACE2010M
Manufacturer ACE Technology
File Size 300.16 KB
Description P-Channel MOSFET
Datasheet download datasheet ACE2010M Datasheet

General Description

The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.

Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Overview

ACE2010M P-Channel -100V MOSFET.

Key Features

  • Low rDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe DPAK saves board space.
  • Fast switching speed.
  • High performance trench technology Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b TC=25°C Continuous Source Current (Diode Conduction) a Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Symbol VDS VG.

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