ACE Technology ACE2010M
The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.| Part No. | ACE2010M |
|---|---|
| Datasheet | ACE2010M Download |
| Manufacturer |  ACE Technology |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.FEATURES
● Low rDS(on) provides higher efficiency and extends battery life● Low thermal impedance copper leadframe DPAK saves board space
● Fast switching speed
● High performance trench technology
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b TC=25°C Continuous Source Current (Diode Conduction) a Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit -100 ±20 11 ±40 -15 50 -55 to 175 Unit V A A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Maximum Junction-to-Case Symbol Maximum Unit RθJA RθJC 50 °C/W 3.0 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 Packaging Typ...
