ACE2010M - P-Channel MOSFET

Product Overview

ACE Technology

Datasheet Details

Part number	ACE2010M
Manufacturer	ACE Technology
File Size	300.16 KB
Description	P-Channel MOSFET
Datasheet	ACE2010M Datasheet
Additional preview pages of the ACE2010M datasheet.

Product details

Description

The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.

Features

Low rDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b TC=25°C Continuous Source Current (Diode Conduction) a Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Symbol VDS VG.

📁 Similar Datasheet

ACE2302BBM - N-Channel MOSFET (VBsemi)
ACE254RUW48 - 4 Bay / 10 Kilowatt Power Shelf (Lineage Power)
ACE-3600 - RNC-Site Gateway Manual (RAD Data Communications)
ACE-716 - RUGGED AC/DC INPUT 150W POWER SUPPLY (ETC)
ACE1001 - Arithmetic Controller Engine (Fairchild Semiconductor)
ACE1101 - Arithmetic Controller Engine (ACEx) for Low Power Applications (Fairchild Semiconductor)
ACE1202 - Arithmetic Controller Engine (Fairchild Semiconductor)
ACE125RUW48 - 5 Bay / 6 Kilowatt Power Shelf (Lineage Power)

Other Datasheets by ACE Technology

ACE2006M - N-Channel MOSFET
ACE2020M - N-Channel MOSFET
ACE2301 - P-Channel Enhancement Mode MOSFET
ACE2302 - N-Channel Enhancement Mode MOSFET
ACE2302M - N-Channel MOSFET
ACE2303 - P-Channel Enhancement Mode MOSFET

Published: Apr 18, 2016 |