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ACE3413 - P-Channel Enhancement Mode MOSFET

General Description

The ACE3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -20V/-3.4A, RDS(ON)=95mΩ@VGS=-4.5V -20V/-2.4A, RDS(ON)=120mΩ@VGS=-2.5V -20V/-1.7A, RDS(ON)=145mΩ@VGS=-1.8V -20V/-1.0A, RDS(ON)=210mΩ@VGS=-1.25V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

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Datasheet Details

Part number ACE3413
Manufacturer ACE Technology
File Size 193.46 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ACE3413 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ACE3413 Technology Description P-Channel Enhancement Mode MOSFET The ACE3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • • • • • • • • • • • • • -20V/-3.4A, RDS(ON)=95mΩ@VGS=-4.5V -20V/-2.4A, RDS(ON)=120mΩ@VGS=-2.5V -20V/-1.7A, RDS(ON)=145mΩ@VGS=-1.8V -20V/-1.0A, RDS(ON)=210mΩ@VGS=-1.