ACE Technology ACE3926E
The ACE3926E utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.| Part No. | ACE3926E |
|---|---|
| Datasheet | ACE3926E Download |
| Manufacturer |  ACE Technology |
| Description | DUAL N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.FEATURES
● Low rDS(on) trench technology● Low thermal impedance
● Fast switching speed
APPLICATIONS
● Power Routing● Li Ion Battery Packs
● Level Shifting and Driver Circuits
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Limit Units VDS 20 V VGS ±12 V 13 ID A 10 IDM 50 A IS 7 A 2.5 PD W 1.5 TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA Maximum 83 120 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 Packaging Type DFN3*3-8L AC...
