ACE Technology ACE4940M
The ACE4940M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.| Part No. | ACE4940M |
|---|---|
| Datasheet | ACE4940M Download |
| Manufacturer |  ACE Technology |
| Description | Dual N-Channel 40-V MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Low rDS(on) trench technology● Low thermal impedance
● Fast switching speed
APPLICATIONS
● White LED boost converters● Automotive Systems
● Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Limit Units VDS 40 V VGS ±20 V 8.3 ID A 6.8 IDM 50 A IS 3 A 2.1 PD W 1.3 TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA Maximum 62.5 110 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.2 1 Packaging Type SOP-8 S1 G1 S2 G2 D1 D1 D2 D2 Ordering information ACE4940M FM + H Halogen - free Pb - free FM : SOP-8 ACE4940M Dual N-Channel 40-V MOSFET VER 1.2 2 ACE4940M Dual N-Channel 40-V MOSFETELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise specified.
