ACE Technology ACE7333M
The ACE7333M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications.| Part No. | ACE7333M |
|---|---|
| Datasheet | ACE7333M Download |
| Manufacturer |  ACE Technology |
| Description | P-Channel 30-V (D-S) MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Low rDS(on) trench technology● Low thermal impedance
● Fast switching speed
APPLICATIONS
● White LED boost converters● Automotive Systems
● Industrial DC/DC Conversion Circuits PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) ID(A) -30 20 @ VGS = -10V -10.9 36 @ VGS = -4.5V -8.1
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a TA=25 OC TA=70 OC Pulse Drain Current b Continuous Drain Current (Diode Continuous) a Power Dissipation a TA=25 OC TA=70 OC Operating Junction and Storage Temperature Range VDS 30 VGS ±20 -10.9 ID -8.2 IDM -50 IS -4.5 3.5 PD 2 TJ,TSTG -55 to 150 V V A A W OC Parameter Maximum Junction-to-Ambient a t≦10sec Steady State Symbol RθJA Maximum 35 81 Units ℃/W ℃/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 Packaging Type DFN3*3-8L ACE7333M P-Channel 30-V (D-S) MOSFET Ordering information ACE7333M NN + H Halogen - free...
