ADV ADM12P03S
P-Channel MOSFET
| Part No. | ADM12P03S |
|---|---|
| Datasheet | ADM12P03S Download |
| Manufacturer | ADV |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
( TA = 25°C unless otherwise specified ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C TC=25°C TC=75°C TC=25°C TC=75°C Thermal Characteristics Symbol Parameter RthJC Thermal resistance junction-case max RthJA Thermal resistance junction-ambient max(PCB mounted ) ⑵ 1. Pulse width limited by maximum junction temperature. 2. 1-in2 2oz Cu PCB board Ratings -30 ±20 150 -55 to 150 -2.1 -50 -12 -6 2.5 1.6 Ratings 3 62.5 Unit V °C °C A A A A W W Unit °C/W °C/W 1/3 Ver.0.11 ADV ADM12P03SELECTRICAL CHARACTERISTICS
(TA=25°C Unless Otherwise Noted) Symbol Parameter Test conditions Min. Typ. Max. Unit On/off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250uA -30 IDSS Zero Gate Voltag...
