ADM2300 - N-Channel MOSFET

Datasheet Details

Part number	ADM2300
Manufacturer	ADV
File Size	453.21 KB
Description	N-Channel MOSFET
Datasheet	ADM2300 Datasheet

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ADV ADM2300 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 20V ID 4.2A RDS(ON) (mΩ) 18mΩ SOT-23 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current（3） TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current TC=25°C TC=25°C TC=125°C PD Maximum Power Dissipation（3） 1. Pulse width limited by maximum junction temperature. Thermal Characteristics Symbol Parameter RthJA Thermal resistance junction-ambient max（3） Ratings 20 ±12 125 -55 to 150 1.25 12 4.6 4.2 1.