ADV ADM75N06
The ADM75N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | ADM75N06 |
|---|---|
| Datasheet | ADM75N06 Download |
| Manufacturer | ADV |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low Gate Charge for Fast Switching Application
● Low RDS(ON) to Minimize Conductive Loss
● 100% EAS Guaranteed
● Optimized V(BR)DSS Ruggedness
● Lead-Free,RoHS Compliant 1 2 3
DESCRIPTION
: It can be used in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS
( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC =25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested（2） ID Continuous Drain Current（1） PD Maximum Power Dissipation TC=25°C TC=25°C TC=100°C
