AFSEMI SSC8205GSB
Dual N-Channel Enhancement Mode MOSFET
FEATURES
VDS VGS RDSon TYP ID 20mR@4V5 20V ±12V 22mR@3V85 6A 24mR@2V5 Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current●
GENERAL DESCRIPTION
Case: SOT23-6 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208●
APPLICATIONS
● Li-ion battery protection ;● Load swich
● Pin configuration Top View PIN NUMBER 1 2 3 4 5 6 SOT23-6L NAME S1 D S2 G2 D G1 FUNCTION SOURCE1 DRAIN SOURCE2 GATE2 DRAIN GATE1
● Package Information ⑥ ⑤④ ①② ③ SSC-1V0 Units:mm SOT23-6L 1/5 Analog Future SSC8205GSB
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ABSOLUTE MAXIMUM RATINGS
@ TA = 25°C unless otherwise specified Parameter Drain-Source Voltage Gate-Source Voltage Drain Cur