AFSEMI SSC8428JN3
The SSC8428JN3 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.| Part No. | SSC8428JN3 |
|---|---|
| Datasheet | SSC8428JN3 Download |
| Manufacturer | AFSEMI |
| Description | Dual N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
VDS VGS 20V ±12V RDSon TYP 13mR@10V 15mR@4V5 ID 8A●
APPLICATIONS
● Li-ion battery protection● Load switch
● Pin configuration Top View Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current
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GENERAL DESCRIPTION
DFN3X2● Package Information SSC-1V0 1/5 Analog Future SSC8428JN3
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ABSOLUTE MAXIMUM RATINGS
@ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current note1 TA=25℃ TA=100℃ ID Pulsed Drain Current Total Power Dissipation Operating and Storage Temperature Range IDM PD Top
