SSCE5V032N1
SSCE5V032N1 is TVS Diodes manufactured by AFSEMI.
Description
- PIN configuration
The SSCE5V032N1 is designed with SSC Punch-Through process TVS technology to protect voltage sensitive ponents from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space es at a premium. Also because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed, USB 3.0 super speed, VGA, DVI, HDMI,SDI and other high speed line applications.
- Feature
- 50W peak pulse power (t P = 8/20μs)
- DFN1006 Package
- Working voltage: 5V
- Low clamping voltage
- Low capacitance
- Ro HS pliant transient protection for high speed data lines to IEC61000-4-2(ESD)±15k V(air),±8k V(contact)
Topview
- Applications
- DVI & HDMI Port Protection
- Serial and Parallel Ports
- Projection TV
- Notebooks, Desktops, Servers
- Solid-state Punch-Through TVS Process technology Portable instrumentation
- Machanical data
- Lead finish:100% matte Sn(Tin)
- Mounting position: Any
- Qualified max reflow temperature:260℃
- Device meets MSL 1 requirements
- Pure tin plating: 7 ~ 17 um
- Pin flatness:≤3mil
SSC-V1.0
.afsemi.
1/6
Analog Future
- Electronic Parameter
Symbol
VRWM IR VBR IT IPP VC PPP C
Parameter
Peak Reverse Working Voltage Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Peak Pulse Power Junction Capacitance
- Absolute maximum rating @TA=25℃
Symbol PPP TSTG TJ
Parameter
Peak Pulse Power（8/20μS） Storage Temperature Operating Temperature
Value
80 -55/+150...
