AGM AGM40P55AP
The AGM40P55AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) This device is ideal for load switch and battery protection applications.| Part No. | AGM40P55AP |
|---|---|
| Datasheet | AGM40P55AP Download |
| Manufacturer | AGM |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
●FEATURES
● Advance high cell density Trench technology● Low RDS(ON) to minimize conductive loss
● Low Gate Charge for fast switching
● Low Thermal resistance
● Application
● MB/VGA Vcore
● SMPS 2nd Synchronous Rectifier
● POL application
● BLDC Motor driver Product Summary BVDSS -40V RDSON 8.9mΩ PDFN3*3 Pin Configuration ID -50A Package Marking and Ordering Information Device Marking Device AGM40P55AP AGM40P55AP Device Package PDFN3*3 Reel Size ---- Tape width ---- Quantity 5000 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS VGS ID IDM (pluse) Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain Current-Continuous@ Current-Pulsed (Note 2) PD EAS TJ,TSTG Maximum Power Dissipation(Tc=25℃) Maximum Power Dissipation(Tc=100℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Value Unit -40 V ±20 V -50 A -31 A...
