AGM035N10A - MOSFET

Description

The AGM035N10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

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Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM035N10A
Manufacturer	AGMSEMI
File Size	1.22 MB
Description	MOSFET
Datasheet	AGM035N10A Datasheet
Additional preview pages of the AGM035N10A datasheet.

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Full PDF Text Transcription

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AGM035N10A ● General Description The AGM035N10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 100V RDSON 3.3mΩ PDFN5*6 Pin Configuration ID 112A Package Marking and Ordering Information Device Marking Device AGM035N10A AGM035N10A Device Package PDFN5*6 Reel Size ---- Tape width ---- Quantity 3000 Table 1.

Published: Dec 28, 2024 |