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AGM038N10A - MOSFET

Description

The AGM038N10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet Details

Part number AGM038N10A
Manufacturer AGMSEMI
File Size 611.31 KB
Description MOSFET
Datasheet download datasheet AGM038N10A Datasheet
Additional preview pages of the AGM038N10A datasheet.

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AGM038N10A ● General Description The AGM038N10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 100V RDSON 3.8mΩ PDFN5*6 Pin Configuration ID 120A Package Marking and Ordering Information Device Marking Device AGM038N10A AGM038N10A Device Package PDFN5*6 Reel Size ---- Tape width ---- Quantity 3000 Table 1.
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