• Part: AGM056N10H
  • Description: MOSFET
  • Manufacturer: AGMSEMI
  • Size: 1.25 MB
Download AGM056N10H Datasheet PDF
AGMSEMI
AGM056N10H
AGM056N10H is manufactured by AGMSEMI.
- General Description The AGM056N10H bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. - Features - Advance high cell density Trench technology - Low RDS(ON) to minimize conductive loss - Low Gate Charge for fast switching - Low Thermal resistance - Application - MB/VGA Vcore - SMPS 2nd Synchronous Rectifier - POL application - BLDC Motor driver Product Summary BVDSS 100V RDSON 5.1mΩ TO-263 Pin Configuration ID 140A Package Marking and Ordering Information Device Marking AGM056N10H Device AGM056N10H Device Package TO-263 Reel Size...