AGM056N10H - MOSFET

Description

The AGM056N10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

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Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM056N10H
Manufacturer	AGMSEMI
File Size	1.25 MB
Description	MOSFET
Datasheet	AGM056N10H Datasheet
Additional preview pages of the AGM056N10H datasheet.

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Full PDF Text Transcription

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AGM056N10H ● General Description The AGM056N10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 100V RDSON 5.1mΩ TO-263 Pin Configuration D G S ID 140A Package Marking and Ordering Information Device Marking AGM056N10H Device AGM056N10H Device Package TO-263 Reel Size 330mm Tape width 25mm Quantity 800 Table 1.

Published: Dec 28, 2024 |