AGM065N10C - MOSFET

Description

The AGM065N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

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Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM065N10C
Manufacturer	AGMSEMI
File Size	600.68 KB
Description	MOSFET
Datasheet	AGM065N10C Datasheet
Additional preview pages of the AGM065N10C datasheet.

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Full PDF Text Transcription

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AGM065N10C ● General Description The AGM065N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 100V RDSON 6.2mΩ TO-220 Pin Configuration ID 100A Package Marking and Ordering Information Device Marking Device AGM065N10C AGM065N10C Device Package TO-220 Reel Size ---- Tape width ---- Quantity 1000 Table 1.

Published: Dec 28, 2024 |