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AGM085N10D - MOSFET

Description

The AGM085N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 100V 8.0mΩ 80A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance TO-252 Pin Configuration D.

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Datasheet Details

Part number AGM085N10D
Manufacturer AGMSEMI
File Size 774.25 KB
Description MOSFET
Datasheet download datasheet AGM085N10D Datasheet
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AGM085N10D ● General Description The AGM085N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 100V 8.0mΩ 80A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance TO-252 Pin Configuration D ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application DS G ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device AGM085N10D AGM085N10D Device Package TO-252 Reel Size ---- Tape width ---- Quantity 2500 Table 1.
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