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AGM1075MNA - MOSFET

Datasheet Summary

Description

protection applications.

Features

  • Advance high cell density Trench technology PDFN5.
  • 6 Pin Configuration.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet preview – AGM1075MNA

Datasheet Details

Part number AGM1075MNA
Manufacturer AGMSEMI
File Size 2.41 MB
Description MOSFET
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Full PDF Text Transcription

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AGM1075MNA ● General Description The AGM1075MNA combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) Product Summary This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 100V 65mΩ 16A ● Features ■ Advance high cell density Trench technology PDFN5*6 Pin Configuration ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore D1 D1D2D2 ■ SMPS 2nd Synchronous Rectifier ■ POL application S1 G1 S2 G2 ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device AGM1075MNA AGM1075MNA Device Package PDFN5*6 Reel Size 330mm Tape width 12mm Quantity 3000 Table 1.
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