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AGM10N65F Datasheet MOSFET

Manufacturer: AGMSEMI

Overview: AGM10N65F ● General.

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General Description

The AGM10N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

Product Summary This device is ideal for load switch and battery protection applications.

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Key Features

  • s BVDSS RDSON ID 650V 0.98Ω 10A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching TO-220F Pin Configuration.
  • Low Thermal resistance.

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