AGM12N65F - MOSFET

Datasheet Summary

Description

The AGM12N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s BVDSS RDSON ID 650V 0.76Ω 12A.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching TO-220F Pin Configuration.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM12N65F
Manufacturer	AGMSEMI
File Size	557.93 KB
Description	MOSFET
Datasheet	AGM12N65F Datasheet
Additional preview pages of the AGM12N65F datasheet.

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Full PDF Text Transcription

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AGM12N65F ● General Description The AGM12N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 650V 0.76Ω 12A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching TO-220F Pin Configuration ■ Low Thermal resistance ● Application ■ Electronic Ballast ■ Electronic Transformer ■ Switch Mode Power Supply Package Marking and Ordering Information Device Marking AGM12N65F Device AGM12N65F Device Package TO-220F Reel Size ---- Tape width ---- Quantity 1000 Table 1.

Published: Dec 28, 2024 |