AGMSEMI AGM13T15D
The AGM13T15D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .| Part No. | AGM13T15D |
|---|---|
| Datasheet | AGM13T15D Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Product Summary This device is ideal for load switch and battery protection applications.●
FEATURES
BVDSS RDSON ID 135V 15.5mΩ 58A● Advance high cell density Trench technology
● Low RDS(ON) to minimize conductive loss
● Low Gate Charge for fast switching TO-252 Pin Configuration
● Low Thermal resistance
● 100% Avalanche tested
● 100% DVDS tested
● Application
● MB/VGA Vcore
● SMPS 2nd Synchronous Rectifier
● POL application
● BLDC Motor driver Package Marking and Ordering Information Device Marking AGM13T15D Device AGM13T15D Device Package TO-252 Reel Size 330mm Tape width 16mm Quantity 2500 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain Current-Pulsed (Note 2) PD EAS TJ,TSTG Maximum Power Dissipation(Tc=25℃) Maximum Power Dissipation(Tc=100℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2.
