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AGM14N10A - MOSFET

Description

The AGM14N10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 100V 12mΩ 50A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching PDFN5.
  • 6 Pin Configuration.
  • Low Thermal resistance.

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Datasheet Details

Part number AGM14N10A
Manufacturer AGMSEMI
File Size 577.05 KB
Description MOSFET
Datasheet download datasheet AGM14N10A Datasheet
Additional preview pages of the AGM14N10A datasheet.

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AGM14N10A ● General Description The AGM14N10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 100V 12mΩ 50A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching PDFN5*6 Pin Configuration ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM14N10A Device AGM14N10A Device Package PDFN5*6 Reel Size ---- Tape width ---- Quantity 3000 Table 1.
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