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AGM150P10AP - MOSFET

Description

The AGM150P10AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet preview – AGM150P10AP

Datasheet Details

Part number AGM150P10AP
Manufacturer AGMSEMI
File Size 1.11 MB
Description MOSFET
Datasheet download datasheet AGM150P10AP Datasheet
Additional preview pages of the AGM150P10AP datasheet.

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● General Description The AGM150P10AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Product Summary BVDSS -100V RDSON 112mΩ PDFN3.3*3.3 Pin Configuration AGM150P10AP ID -16A Device Marking Device AGM150P10AP AGM150P10AP Device Package PDFN3.3*3.3 Reel Size 330mm Table 1.
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