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AGM1810S - MOSFET

Datasheet Summary

Description

The AGM1810S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 100V 8.5mΩ 16A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet Details

Part number AGM1810S
Manufacturer AGMSEMI
File Size 678.31 KB
Description MOSFET
Datasheet download datasheet AGM1810S Datasheet
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AGM1810S ● General Description The AGM1810S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 100V 8.5mΩ 16A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore SOP8 Pin Configuration DDDD ■ SMPS 2nd Synchronous Rectifier ■ POL application SSS G ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM1810S Device AGM1810S Device Package SOP8 Reel Size ---- Tape width ---- Quantity 3000 Table 1.
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