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AGM18N10I - MOSFET

Datasheet Summary

Description

The AGM18N10I combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 100V 16mΩ 40A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching TO-251 Pin Configuration.
  • Low Thermal resistance.

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Datasheet Details

Part number AGM18N10I
Manufacturer AGMSEMI
File Size 898.34 KB
Description MOSFET
Datasheet download datasheet AGM18N10I Datasheet
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AGM18N10I ● General Description The AGM18N10I combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 100V 16mΩ 40A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching TO-251 Pin Configuration ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM18N10I Device AGM18N10I Device Package TO-251 Reel Size 330mm Tape width 16mm Quantity 2500 Table 1.
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