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AGM206MAP - MOSFET

Datasheet Summary

Description

The AGM206MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 20V 4.5mΩ 25A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet Details

Part number AGM206MAP
Manufacturer AGMSEMI
File Size 698.80 KB
Description MOSFET
Datasheet download datasheet AGM206MAP Datasheet
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AGM206MAP ● General Description The AGM206MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 20V 4.5mΩ 25A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore PDFN3*3 Pin Configuration D1 D1D2D2 ■ SMPS 2nd Synchronous Rectifier ■ POL application S1 G1 S2 G2 ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AAGM206MAP Device AGM206MAP Device Package PDFN3*3 Reel Size ---- Tape width ---- Quantity 5000 Table 1.
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