AGMSEMI AGM20P07EL
The AGM20P07EL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.| Part No. | AGM20P07EL |
|---|---|
| Datasheet | AGM20P07EL Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
●FEATURES
● Advance high cell density Trench technology● Low RDS(ON) to minimize conductive loss
● Low Gate Charge for fast switching
● Low Thermal resistance
● 100% Avalanche tested
● 100% DVDS tested
● Application
● MB/VGA Vcore
● SMPS 2nd Synchronous Rectifier
● POL application
● BLDC Motor driver Product Summary BVDSS -20V RDSON 16mΩ SOT-23-3 Pin Configuration ID -6.5A Package Marking and Ordering Information Device Marking Device 20P07 AGM20P07EL Device Package SOT-23-3 Reel Size 178mm Tape width 8mm Quantity 3000 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous(Ta=25℃) (Note 1) Drain Current-Continuous(Ta=70℃) Drain Current-Continuous@ Current-Pulsed (Note 2) PD EAS TJ,TSTG Maximum Power Dissipation(Ta=25℃) Maximum Power Dissipation(Ta=70℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2. Thermal Characteris...
