AGM20T09AT - MOSFET

Datasheet Summary

Description

The AGM20T09AT combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM20T09AT
Manufacturer	AGMSEMI
File Size	1.82 MB
Description	MOSFET
Datasheet	AGM20T09AT Datasheet
Additional preview pages of the AGM20T09AT datasheet.

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Full PDF Text Transcription

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AGM20T09AT ● General Description The AGM20T09AT combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 200V RDSON 9.3mΩ TO-247 Pin Configuration ID 110A Package Marking and Ordering Information Device Marking Device AGM20T09AT AGM20T09AT Device Package TO-247 Reel Size ---- Tape width ---- Quantity 450 Table 1.

Published: Dec 28, 2024 |