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AGM210AP - MOSFET

Datasheet Summary

Description

The AGM210AP combines advanced trenchMOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 20V 8.5mΩ 25A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching PDFN3.3.
  • 3.3 Pin Configuration.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGM210AP
Manufacturer AGMSEMI
File Size 695.74 KB
Description MOSFET
Datasheet download datasheet AGM210AP Datasheet
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AGM210AP ● General Description The AGM210AP combines advanced trenchMOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 20V 8.5mΩ 25A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching PDFN3.3*3.3 Pin Configuration ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM210AP Device AGM210AP Device Package PDFN3.3*3.3 Reel Size 330mm Tape width 12mm Quantity 5000 Table 1.
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