AGMSEMI AGM210AP
The AGM210AP combines advanced trenchMOSFET technology with a low resistance package to provide extremely low RDS(ON) . Junction Temperature Normalized BVDSS 3 VER2.5 AGM210AP IS (A) Capacitance (pF) 100 10 1 125 ℃ 25℃ 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (V) Figure 7: Body-Diode Characteristics 10000 1000 CISS 100 COSS CRSS 10 0 2 5 10 15 20 VDS (V) Figure 9: Capacitance Characteristics 1.5 1 0.5 0 0 25 50 75 100...| Part No. | AGM210AP |
|---|---|
| Datasheet | AGM210AP Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Product Summary This device is ideal for load switch and battery protection applications.●
FEATURES
BVDSS RDSON ID 20V 8.5mΩ 25A● Advance high cell density Trench technology
● Low RDS(ON) to minimize conductive loss
● Low Gate Charge for fast switching PDFN3.3*3.3 Pin Configuration
● Low Thermal resistance
● 100% Avalanche tested
● 100% DVDS tested
● Application
● MB/VGA Vcore
● SMPS 2nd Synchronous Rectifier
● POL application
● BLDC Motor driver Package Marking and Ordering Information Device Marking AGM210AP Device AGM210AP Device Package PDFN3.3*3.3 Reel Size 330mm Tape width 12mm Quantity 5000 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain Current-Continuous@ Current-Pulsed (Note 2) PD EAS TJ,TSTG Maximum Power Dissipation(Tc=25℃) Maximum Power Dissipation(Tc=100℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2.
