AGMSEMI AGM216ME
The AGM216ME combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.| Part No. | AGM216ME |
|---|---|
| Datasheet | AGM216ME Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
●FEATURES
● Advance high cell density Trench technology●Low RDS(ON) to minimize conductive loss
●Low Gate Charge for fast switching
●Low Thermal resistance
●100% Avalanche tested
●100% DVDS tested
● Application
●MB/VGA Vcore
●SMPS 2nd Synchronous Rectifier
●POL application
●BLDC Motor driver Product Summary BVDSS 20V -20V RDSON 21mΩ 27.5mΩ SOT23-6L Pin Configuration ID 3.3A -5.6A Package Marking and Ordering Information Device Marking AGM216ME Device AGM216ME Device Package SOT23-6L Reel Size 178mm Tape width 8mm Quantity 3000 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol VDS VGS ID IDM (pluse) PD EAS TJ,TSTG Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current-Continuous(TA=25℃) (Note 1) Drain Current-Continuous(TA=100℃) Drain Current-Pulsed (Note 2) Total Power Dissipation(TA=25℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Rating N-Ch P-Ch 20 ±12 3.3 2.1 13.2 1.25 25 -55 To 150 -20 ±10 -5.6 -3.7 -22.4 1.25 16 -55 To 150 Units V V A A A W mJ ℃ Table 2.
