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AGM216ME - MOSFET

Datasheet Summary

Description

The AGM216ME combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGM216ME
Manufacturer AGMSEMI
File Size 1.96 MB
Description MOSFET
Datasheet download datasheet AGM216ME Datasheet
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AGM216ME ● General Description The AGM216ME combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ■100% Avalanche tested ■100% DVDS tested ● Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Product Summary BVDSS 20V -20V RDSON 21mΩ 27.5mΩ SOT23-6L Pin Configuration ID 3.3A -5.6A Package Marking and Ordering Information Device Marking AGM216ME Device AGM216ME Device Package SOT23-6L Reel Size 178mm Tape width 8mm Quantity 3000 Table 1.
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