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AGM2N7002K3 - MOSFET

Datasheet Summary

Description

The AGM2N7002K3 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.
  • With ESD.

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Datasheet Details

Part number AGM2N7002K3
Manufacturer AGMSEMI
File Size 770.01 KB
Description MOSFET
Datasheet download datasheet AGM2N7002K3 Datasheet
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AGM2N7002K3 ● General Description The AGM2N7002K3 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ■ With ESD ● Application ■ Electronic Ballast ■ Electronic Transformer ■ Switch Mode Power Supply Product Summary BVDSS 60V RDSON 1.9Ω SOT-23 Pin Configuration ID 0.3A Package Marking and Ordering Information Device Marking Device 7002K AGM2N7002K3 Device Package SOT-23 Reel Size 178mm Tape width 8mm Quantity 3000 Table 1.
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