AGMSEMI AGM2N7002K3
The AGM2N7002K3 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.| Part No. | AGM2N7002K3 |
|---|---|
| Datasheet | AGM2N7002K3 Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
●FEATURES
● Advance high cell density Trench technology● Low RDS(ON) to minimize conductive loss
● Low Gate Charge for fast switching
● Low Thermal resistance
● 100% Avalanche tested
● 100% DVDS tested
● With ESD
● Application
● Electronic Ballast
● Electronic Transformer
● Switch Mode Power Supply Product Summary BVDSS 60V RDSON 1.9Ω SOT-23 Pin Configuration ID 0.3A Package Marking and Ordering Information Device Marking Device 7002K AGM2N7002K3 Device Package SOT-23 Reel Size 178mm Tape width 8mm Quantity 3000 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous(TA=25℃) (Note 1) Drain Current-Continuous(TA=100℃) Drain Current-Continuous@ Current-Pulsed (Note 2) PD EAS TJ,TSTG Maximum Power Dissipation(TA=25℃) Maximum Power Dissipation(TA=100℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic V...
