AGM2N7002K3 Description
The AGM2N7002K3 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
AGM2N7002K3 Key Features
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Low Thermal resistance
- 100% Avalanche tested
- 100% DVDS tested
- With ESD
- Application
- Electronic Ballast
- Electronic Transformer