AGM3015H - MOSFET

Datasheet Summary

Description

The AGM3015H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM3015H
Manufacturer	AGMSEMI
File Size	810.02 KB
Description	MOSFET
Datasheet	AGM3015H Datasheet
Additional preview pages of the AGM3015H datasheet.

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Full PDF Text Transcription

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AGM3015H ● General Description The AGM3015H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 30V RDSON 1.5mΩ TO-263 Pin Configuration D G S ID 230A Package Marking and Ordering Information Device Marking AGM3015H Device AGM3015H Device Package TO-263 Reel Size ---- Tape width ---- Quantity 800 Table 1.

Published: Dec 28, 2024 |