AGMSEMI AGM310MAR
The AGM310MAR combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.| Part No. | AGM310MAR |
|---|---|
| Datasheet | AGM310MAR Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
●FEATURES
● Advance high cell density Trench technology● Low RDS(ON) to minimize conductive loss
●Low Gate Charge for fast switching
●Low Thermal resistance
●100% Avalanche tested
●100% DVDS tested
● Application
●MB/VGA Vcore
●SMPS 2nd Synchronous Rectifier
●POL application
●BLDC Motor driver AGM310MAR Product Summary BVDSS 30V -30V RDSON 11mΩ 18mΩ ID 23A -25A PDFN5*6 Pin Configuration D1 D1D2D2 S1 G1 S2 G2 D1 D2 1 G2 G S1 S2 Package Marking and Ordering Information Device Marking Device AGM310MAR AGM310MAR Device Package PDFN5*6 Reel Size 330mm Tape width 12mm Quantity 3000 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol VDS VGS ID IDM (pluse) PD EAS TJ,TSTG Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current-Continuous(TC=25℃) (Note 1) Drain Current-Continuous(TC=100℃) Drain Current-Continuous@ Current-Pulsed (Note 2) Total Power Dissipation(TC=25℃) Total Power Dissipation(TC=100℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Rating N-Ch P-Ch 30 ±20 23 15 92 3.6 1.5 35 -55 To 150 -30 ±20 -25 -16 -100 3.6 1.5 42 -55 To 150 Table 2.
