AGM3400E - MOSFET

Description

The AGM3400E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

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Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM3400E
Manufacturer	AGMSEMI
File Size	1.48 MB
Description	MOSFET
Datasheet	AGM3400E Datasheet
Additional preview pages of the AGM3400E datasheet.

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Full PDF Text Transcription

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AGM3400E ● General Description The AGM3400E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 30V RDSON 20mΩ SOT-23-3 Pin Configuration ID 5.6A Package Marking and Ordering Information Device Marking 3400E Device AGM3400E Device Package SOT-23-3 Reel Size ---- Tape width ---- Quantity 3000 Table 1.

Published: Dec 28, 2024 |