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AGM40P100C - MOSFET

Description

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet Details

Part number AGM40P100C
Manufacturer AGMSEMI
File Size 881.30 KB
Description MOSFET
Datasheet download datasheet AGM40P100C Datasheet
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Full PDF Text Transcription

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AGM40P100C ● General Description The AGM40P100C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS -40V RDSON 4.6mΩ T0-220C Pin Configuration ID -114A Package Marking and Ordering Information Device Marking AGM40P100C Device AGM40P100C Device Package TO-220C Reel Size ---- Tape width ---- Quantity 1000 Table 1.
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