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AGM40P26E - MOSFET

Description

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet preview – AGM40P26E

Datasheet Details

Part number AGM40P26E
Manufacturer AGMSEMI
File Size 1.26 MB
Description MOSFET
Datasheet download datasheet AGM40P26E Datasheet
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Full PDF Text Transcription

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AGM40P26E ● General Description The AGM40P26E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS -40V RDSON 36mΩ SOT23-3 Pin Configuration ID -4.5A Package Marking and Ordering Information Device Marking 40P26E Device AGM40P26E Device Package SOT23-3 Reel Size 178mm Tape width 8mm Quantity 3000 Table 1.
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