AGMSEMI AGM40P26E
The AGM40P26E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) This device is ideal for load switch and battery protection applications.| Part No. | AGM40P26E |
|---|---|
| Datasheet | AGM40P26E Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
●FEATURES
● Advance high cell density Trench technology● Low RDS(ON) to minimize conductive loss
● Low Gate Charge for fast switching
● Low Thermal resistance
● Application
● MB/VGA Vcore
● SMPS 2nd Synchronous Rectifier
● POL application
● BLDC Motor driver Product Summary BVDSS -40V RDSON 36mΩ SOT23-3 Pin Configuration ID -4.5A Package Marking and Ordering Information Device Marking 40P26E Device AGM40P26E Device Package SOT23-3 Reel Size 178mm Tape width 8mm Quantity 3000 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS VGS ID IDM (pluse) Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current-Continuous(TA=25℃) (Note 1) Drain Current-Continuous(TA=70℃) Drain Current-Continuous@ Current-Pulsed (Note 2) PD EAS TJ,TSTG Maximum Power Dissipation(TA=25℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Value Unit -40 V ±20 V -4.5 A -3.0 A 18 A 1.6 w 260 mJ -55 To 150 ℃ Symbol RθJA Parameter Typ Thermal Resistance Junction-ambient (Steady State)1 --- Max 78 Unit ℃/W 1 VER2.6 AGM40P26E Table 3.
