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AGM40P65AP - MOSFET

Description

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet Details

Part number AGM40P65AP
Manufacturer AGMSEMI
File Size 899.62 KB
Description MOSFET
Datasheet download datasheet AGM40P65AP Datasheet
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Full PDF Text Transcription

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● General Description The AGM40P65AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS -40V RDSON 65mΩ PDFN3*3 Pin Configuration AGM40P65AP ID -12A Package Marking and Ordering Information Device Marking Device AGM40P65AP AGM40P65AP Device Package PDFN3*3 Reel Size ---- Tape width ---- Quantity 5000 Table 1.
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