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AGM4N65F - MOSFET

Description

The AGM4N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 650V 2Ω 4A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching TO-220F Pin Configuration.
  • Low Thermal resistance.
  • 100% Avalanche test.
  • 100% DVDS tested.

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Datasheet Details

Part number AGM4N65F
Manufacturer AGMSEMI
File Size 690.80 KB
Description MOSFET
Datasheet download datasheet AGM4N65F Datasheet
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AGM4N65F ● General Description The AGM4N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 650V 2Ω 4A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching TO-220F Pin Configuration ■ Low Thermal resistance ■ 100% Avalanche test ■ 100% DVDS tested ● Application ■ Electronic Ballast ■ Electronic Transformer S D G top view G D S bottom view ■ Switch Mode Power Supply Package Marking and Ordering Information Device Marking AGM4N65F Device AGM4N65F Device Package TO-220F Reel Size ---- Tape width ---- Quantity 1000 Table 1.
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