AGM55N15D - MOSFET

Description

The AGM55N15D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

protection applications.

Features

Advance high cell density Trench technology TO-252 Pin Configuration.
Low RDS(ON) to minimize conductive loss D.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM55N15D
Manufacturer	AGMSEMI
File Size	740.16 KB
Description	MOSFET
Datasheet	AGM55N15D Datasheet
Additional preview pages of the AGM55N15D datasheet.

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Full PDF Text Transcription

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AGM55N15D ● General Description The AGM55N15D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 150V 48mΩ 23A ● Features ■ Advance high cell density Trench technology TO-252 Pin Configuration ■ Low RDS(ON) to minimize conductive loss D ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier DS G ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM55N15D Device AGM55N15D Device Package TO-252 Reel Size ---- Tape width ---- Quantity 2500 Table 1.

Published: Dec 28, 2024 |