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AGM55P10S - MOSFET

Description

The AGM55P10S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGM55P10S
Manufacturer AGMSEMI
File Size 486.29 KB
Description MOSFET
Datasheet download datasheet AGM55P10S Datasheet
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AGM55P10S ● General Description The AGM55P10S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS -100V RDSON 65mΩ SOP8 Pin Configuration ID -12A Package Marking and Ordering Information Device Marking Device Device Package AGM55P10S AGM55P10S SOP8 Reel Size 330mm Tape width 12mm Quantity 3000 Table 1.
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