AGMSEMI AGM55P10S
The AGM55P10S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.| Part No. | AGM55P10S |
|---|---|
| Datasheet | AGM55P10S Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
●FEATURES
● Advance high cell density Trench technology● Low RDS(ON) to minimize conductive loss
● Low Gate Charge for fast switching
● Low Thermal resistance
● 100% Avalanche tested
● 100% DVDS tested
● Application
● MB/VGA Vcore
● SMPS 2nd Synchronous Rectifier
● POL application
● BLDC Motor driver Product Summary BVDSS -100V RDSON 65mΩ SOP8 Pin Configuration ID -12A Package Marking and Ordering Information Device Marking Device Device Package AGM55P10S AGM55P10S SOP8 Reel Size 330mm Tape width 12mm Quantity 3000 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS VGS ID IDM (pluse) Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain Current-Pulsed (Note 2) PD EAS TJ,TSTG Maximum Power Dissipation(Tc=25℃) Maximum Power Dissipation(Tc=100℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol Parameter T...
