AGMSEMI AGM605F
The AGM605F combines advanced trenchMOSFET Product Summary technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery BVDSS RDSON ID protection applications.| Part No. | AGM605F |
|---|---|
| Datasheet | AGM605F Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
●FEATURES
60V 4.5mΩ 80A● Advance high cell density Trench technology
● Low RDS(ON) to minimize conductive loss
● Low Gate Charge for fast switching TO-220F Pin Configuration
● Low Thermal resistance
● 100% Avalanche tested
● 100% DVDS tested
● Application
● MB/VGA Vcore
● SMPS 2nd Synchronous Rectifier
● POL application
● BLDC Motor driver Package Marking and Ordering Information Device Marking AGM605F Device AGM605F Device Package TO-220F Reel Size ---- Tape width ---- Quantity 1000 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain Current-Pulsed (Note 2) PD EAS TJ,TSTG Maximum Power Dissipation(Tc=25℃) Maximum Power Dissipation(Tc=100℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Value Unit 60 V ±20 V 80 A 50 A 320 A 70 w 28 w 28...
