AGM612MNA Overview
Description
The AGM612MNA combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Product Summary This device is ideal for load switch and battery BVDSS RDSON ID protection applications.
Key Features
- Advance high cell density Trench technology PDFN5*6 - Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Low D1 D1D2D2
