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AGM65N20AT Datasheet MOSFET

Manufacturer: AGMSEMI

Overview: AGM65N20AT ● General.

General Description

The AGM65N20AT combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

Product Summary This device is ideal for load switch and battery protection applications.

Key Features

  • s BVDSS RDSON ID 200V 17mΩ 75A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching TO-247 Pin Configuration.
  • Low Thermal resistance.