AGM65N20AT - MOSFET

Description

The AGM65N20AT combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s BVDSS RDSON ID 200V 17mΩ 75A.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching TO-247 Pin Configuration.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM65N20AT
Manufacturer	AGMSEMI
File Size	1.79 MB
Description	MOSFET
Datasheet	AGM65N20AT Datasheet
Additional preview pages of the AGM65N20AT datasheet.

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Full PDF Text Transcription

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AGM65N20AT ● General Description The AGM65N20AT combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 200V 17mΩ 75A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching TO-247 Pin Configuration ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM65N20AT Device AGM65N20AT Device Package TO-247 Reel Size --- Tape width --- Quantity 450 Table 1.

Published: Dec 28, 2024 |