AGMH022N10C Description
The AGMH022N10C bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
AGMH022N10C Key Features
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Low Thermal resistance
- 100% Avalanche tested
- 100% DVDS tested
- Application
- MB/VGA Vcore
- SMPS 2nd Synchronous Rectifier
- POL application