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AGMH022N10C - MOSFET

Description

The AGMH022N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGMH022N10C
Manufacturer AGMSEMI
File Size 708.83 KB
Description MOSFET
Datasheet download datasheet AGMH022N10C Datasheet
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AGMH022N10C ● General Description The AGMH022N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 100V RDSON 2.2mΩ TO-220 Pin Configuration ID 220A Package Marking and Ordering Information Device Marking Device AGMH022N10C AGMH022N10C Device Package TO-220 Reel Size --- Tape width --- Quantity 1000 Table 1.
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