AGMH022P10H Description
The AGMH022P10H bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
AGMH022P10H Key Features
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss -Low Gate Charge for fast switching -Low Thermal resistance -100% Avalanche test
- Application -MB/VGA Vcore -SMPS 2nd Synchronous Rectifier -POL application -BLDC Motor driver