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AGMH022P10H - MOSFET

Description

The AGMH022P10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGMH022P10H
Manufacturer AGMSEMI
File Size 1.39 MB
Description MOSFET
Datasheet download datasheet AGMH022P10H Datasheet
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AGMH022P10H ● General Description The AGMH022P10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ■100% Avalanche tested ■100% DVDS tested ● Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Product Summary BVDSS -100V RDSON 20mΩ TO-263 Pin Configuration D G S ID -65A Package Marking and Ordering Information Device Marking Device AGMH022P10H AGMH022P10H Device Package TO-263 Reel Size 330mm Tape width 25mm Quantity 800 Table 1.
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