AGMH022P10H Overview
Description
The AGMH022P10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Key Features
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Low - 100% Avalanche tested
- 100% DVDS tested
