Datasheet4U Logo Datasheet4U.com

AGMH035N10C - MOSFET

Description

The AGMH035N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

📥 Download Datasheet

Datasheet preview – AGMH035N10C

Datasheet Details

Part number AGMH035N10C
Manufacturer AGMSEMI
File Size 1.39 MB
Description MOSFET
Datasheet download datasheet AGMH035N10C Datasheet
Additional preview pages of the AGMH035N10C datasheet.
Other Datasheets by AGMSEMI

Full PDF Text Transcription

Click to expand full text
AGMH035N10C ● General Description The AGMH035N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 100V RDSON 3.6mΩ TO-220 Pin Configuration ID 150A Package Marking and Ordering Information Device Marking Device AGMH035N10C AGMH035N10C Device Package TO-220 Reel Size ---- Tape width ---- Quantity 1000 Table 1.
Published: |