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AGMH12H05H - MOSFET

Description

The AGMH12H05H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche test.
  • 100% DVDS tested.

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Datasheet Details

Part number AGMH12H05H
Manufacturer AGMSEMI
File Size 1.80 MB
Description MOSFET
Datasheet download datasheet AGMH12H05H Datasheet
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AGMH12H05H ● General Description The AGMH12H05H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche test ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 120V RDSON 4.3mΩ TO-263 Pin Configuration D G S ID 125A Package Marking and Ordering Information Device Marking Device AGMH12H05H AGMH12H05H Device Package TO-263 Reel Size 330mm Table 1.
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