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AGMH6080H - MOSFET

Description

technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 60V 6.2mΩ 66A.
  • Advance high cell density Trench technology TO-263 Pin Configuration.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching D.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGMH6080H
Manufacturer AGMSEMI
File Size 691.05 KB
Description MOSFET
Datasheet download datasheet AGMH6080H Datasheet
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AGMH6080H ● General Description The AGMH6080H combines advanced trenchMOSFET Product Summary technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 60V 6.2mΩ 66A ■ Advance high cell density Trench technology TO-263 Pin Configuration ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching D ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier G S ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device Device Package AGMH6080H AGMH6080H TO-263 Reel Size 330mm Table 1.
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